d sot23 p-channel enhancement mode vertical dmos fet issue 3 ? january 1996 features *60 volt v ds *r ds(on) =14 w partmarking detail ? ml complementary type ? zvn3306f absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -60 v continuous drain current at t amb =25c i d -90 ma pulsed drain current i dm -1.6 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -60 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v i d =-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -0.5 -50 m a m a v ds =-60 v, v gs =0v v ds =-48 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -400 ma v ds =-18 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 14 w v gs =-10v, i d =-200ma forward transconductance (1)(2) g fs 60 ms v ds =-18v, i d =-200ma input capacitance (2) c iss 50 pf common source output capacitance (2) c oss 25 pf v ds =-18v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 8ns v dd ? -18v, i d =-200ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 8ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device zvp3306f typical characteristics normalised r ds(on) and v gs(th) vs temperature junction temperature (c) normal i sed r an d v -40 -20 0 20 40 60 80 120 100 140 160 2.0 1.0 0.6 i d= 0.37a 0-2 -4 -6 -8 -10 -1.0 -0.8 -0.6 -0.4 0 -0.2 saturation characteristics on-resistance vs drain current i d- drain current (ma) rds(on)-drain source on resistance w -6v -7v -16v -9v v gs= -10v i d= -1ma v gs= v ds -10v -6 0 -2 -4 -8 0-2 -4 -6 -8-10 -10 v drain source voltage saturation characteristics v gs- gate source voltage (volts) i d= -400ma -200ma -100ma 2.6 180 10 1 100 -10 -100 -1000 v gs =-5v -15v -20v -6v -7v -8v -10v -12v -5v -4.5v -14v v gs = i - dr ai n c urr ent (a m ps) v ds - drain source voltage (volts) -6 -8 -10 -14 -16 -12 -4 -2 00.51.01.5 0 q-gate charge (nc) 40 30 20 0 10 50 60 0 -10 -20 -30 -40 -50 -60 -70 v ds -drain source voltage (volts) capacitance v drain-source voltage c-cap acitance (pf) note:v gs= 0v f=1mhz c iss c oss c rss v g s - g ate s ource v ol tag e ( v ol ts) 1 2 gate charge v gate-source voltage v ds = -20v note:i d=- 0.2a -40v -60v zvp3306f g s sot23 3 -434 3 - 435
d sot23 p-channel enhancement mode vertical dmos fet issue 3 ? january 1996 features *60 volt v ds *r ds(on) =14 w partmarking detail ? ml complementary type ? zvn3306f absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -60 v continuous drain current at t amb =25c i d -90 ma pulsed drain current i dm -1.6 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -60 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v i d =-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -0.5 -50 m a m a v ds =-60 v, v gs =0v v ds =-48 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -400 ma v ds =-18 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 14 w v gs =-10v, i d =-200ma forward transconductance (1)(2) g fs 60 ms v ds =-18v, i d =-200ma input capacitance (2) c iss 50 pf common source output capacitance (2) c oss 25 pf v ds =-18v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 8ns v dd ? -18v, i d =-200ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 8ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device zvp3306f typical characteristics normalised r ds(on) and v gs(th) vs temperature junction temperature (c) normal i sed r an d v -40 -20 0 20 40 60 80 120 100 140 160 2.0 1.0 0.6 i d= 0.37a 0-2 -4 -6 -8 -10 -1.0 -0.8 -0.6 -0.4 0 -0.2 saturation characteristics on-resistance vs drain current i d- drain current (ma) rds(on)-drain source on resistance w -6v -7v -16v -9v v gs= -10v i d= -1ma v gs= v ds -10v -6 0 -2 -4 -8 0-2 -4 -6 -8-10 -10 v drain source voltage saturation characteristics v gs- gate source voltage (volts) i d= -400ma -200ma -100ma 2.6 180 10 1 100 -10 -100 -1000 v gs =-5v -15v -20v -6v -7v -8v -10v -12v -5v -4.5v -14v v gs = i - dr ai n c urr ent (a m ps) v ds - drain source voltage (volts) -6 -8 -10 -14 -16 -12 -4 -2 00.51.01.5 0 q-gate charge (nc) 40 30 20 0 10 50 60 0 -10 -20 -30 -40 -50 -60 -70 v ds -drain source voltage (volts) capacitance v drain-source voltage c-cap acitance (pf) note:v gs= 0v f=1mhz c iss c oss c rss v g s - g ate s ource v ol tag e ( v ol ts) 1 2 gate charge v gate-source voltage v ds = -20v note:i d=- 0.2a -40v -60v zvp3306f g s sot23 3 -434 3 - 435
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